BSS84W Datasheet, PDF (1/1 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BSS84W
P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
Mechanical Data
· Case: SOT-323, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking Code: K84
· Weight: 0.006 grams (approx.)
A
D
TOP VIEW
BC
G
S
E
D
G
H
K
M
J
L
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 3)
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Symbol
VDSS
V_DGR
V_GSS
I_D
P_d
R_qJA
T_j, T_STG
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
BSS84W
-50
-50
±20
-130
200
625
-55 to +150
SOT-323
Dim Min Max
A
0.30 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
H
1.80 2.20
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
All Dimensions in mm
Units
V
V
V
mA
mW
°C/W
°C
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Symbol Min Typ
BV_DSS -50
-75
Zero Gate Voltage Drain Current
¾
¾
I_DSS
¾
¾
¾
¾
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
I_GSS
¾
¾
V_GS(th) -0.8 -1.6
R_{DS (ON)} ¾
6
gFS
.05
¾
C_iss
¾
¾
Coss
¾
¾
C_rss
¾
¾
t_D(ON)
¾
10
t_D(OFF)
¾
18
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
DS30205 Rev. A-2
1 of 1
Max Unit
Test Condition
¾
-15
-60
-100
±10
V VGS = 0V, ID = -250mA
µA VDS = -50V, VGS = 0V, TJ = 25°C
µA V_DS = -50V, V_GS = 0V, T_J = 125°C
nA VDS = -25V, VGS = 0V, TJ = 25°C
nA VGS = ±20V, VDS = 0V
-2.0 V VDS = VGS, ID = -1mA
10
W VGS = -5V, ID = 0.100A
¾
S VDS = -25V, ID = 0.1A
45 pF
25
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
12 pF
¾
ns _{VDD = -30V, ID = -0.27A,}
¾
ns ^{RGEN = 50W, VGS = -10V}
BSS84W