BSS84V_07 Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BSS84V
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 3)
• “Green” Device (Note 4)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-563
D₂
G₁
S₁
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current (Note 2)
Continuous
Continuous
S₂
G₂
D₁
TOP VIEW
Internal Schematic
Symbol
V_DSS
V_DGR
V_GSS
I_D
Value
-50
-50
±20
-130
Units
V
V
V
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
150
833
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BV_DSS
I_DSS
I_GSS
-50 -75 ⎯ V V_GS = 0V, I_D = -250μA
⎯ ⎯ -15 µA V_DS = -50V, V_GS = 0V, T_J = 25°C
⎯ ⎯ ^{-60 µA} V_DS = -50V, V_GS = 0V, T_J = 125°C
⎯ ⎯ ^{-100 nA} _{VDS = -25V, VGS = 0V, TJ = 25°C}
⎯ ⎯ ±50 nA V_GS = ±20V, V_DS = 0V
V_GS(th) -0.8 -1.6 -2.0
R_{DS (ON)} ⎯
2
10
g_FS 0.05 ⎯ ⎯
V V_DS = V_GS, I_D = -1mA
Ω V_GS = -5V, I_D = -0.100A
S V_DS = -25V, I_D = -0.1A
C_iss
C_oss
C_rss
⎯ ⎯ 45 pF
⎯ ⎯ 25 pF ^VDS ^{= -25V, V}GS ^{= 0V, f = 1.0MHz}
⎯ ⎯ 12 pF
t_D(ON) ⎯
t_D(OFF) ⎯
10 ⎯ ns V_DD = -30V, I_D = -0.27A,
18 ⎯ ns R_GEN = 50Ω, V_GS = -10V
Notes:
1. R_GS ≤ 20KΩ.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
BSS84V
Document number: DS30605 Rev. 8 - 2
1 of 3
www.diodes.com
October 2007
© Diodes Incorporated