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| BSS84TA Datasheet, PDF (1/1 Pages) Diodes Incorporated – SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |||
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SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 Â SEPTEMBER 1995 7
PARTMARKING DETAIL Â SP
BSS84
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Gate-Source Voltage Peak
VGS
Power Dissipation at Tamb=25°C
PTOT
Operating and Storage Temperature Range tj:tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
-50
V
-130
mA
-520
mA
±20
V
360
mW
-55 to +150
°C
UNIT CONDITIONS.
Drain-Source
BVDSS
-50
Breakdown Voltage
V
VGS=0V, ID=0.25mA
Gate-Source
Threashold Voltage
VGS(th)
-0.8 -1.5 -2.0 V
VDS=VGS , ID=-1mA
Zero gate Voltage
IDSS
Drain Current
-1
-15
µA
-2
-60
µA
Gate-Source Leakage
Current
Drain Source On-State
Resistance (1)
Forward
Transconductance (1)
(2)
IGSS
RDS(on)
gfs
-100
-1
-10 nA
6
10
â¦
0.05 0.07
S
Tj=25 °C
Tj=125 °C
VDS=-50V, VGS=0V(2)
Tj=25 °C
VDS=-25V, VGS=0V
VGS = ±20V
VDS=0V
VGS=-5V
ID=-100mA
VDS=-25V
ID=-100mA
Input Capacitance (2) Ciss
40
Output Capacitance
Coss
15
Reverse Transfer
Crss
6
Capacitance (2)
Turn-On Time ton
td(on)
10
tr
10
Turn-Off Time toff
td(off)
18
tf
25
VGS=0V
VDS=-25V
pF
f=1MHz
VDD=-30V
ID=-0.27A
ns
VGS=-10V
RGS=50â¦
* (1) Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
(2) Sample test.
3 - 69
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