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BSS84DW_2 Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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BSS84DW
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
⢠Low On-Resistance
⢠Low Gate Threshold Voltage
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Lead Free/RoHS Compliant (Note 3)
⢠"Green" Device (Note 5 and 6)
Mechanical Data
⢠Case: SOT-363
⢠Case Material: Molded Plastic. âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020C
⢠Terminals: Solderable per MIL-STD-202, Method 208
⢠Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
⢠Terminal Connections: See Diagram
⢠Marking Information: See Page 3
⢠Ordering Information: See Page 3
⢠Weight: 0.006 grams (approximate)
SOT-363
D2
G1
S1
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
S2
G2
D1
TOP VIEW
Internal Schematic
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current (Note 2)
Continuous
Continuous
Symbol
VDSS
VDGR
VGSS
ID
Value
-50
-50
±20
-130
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
Pd
RθJA
Tj, TSTG
Value
300
417
-55 to +150
Units
V
V
V
mA
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS
IDSS
IGSS
-50 -75 ⯠V VGS = 0V, ID = -250μA
⯠⯠-15 µA VDS = -50V, VGS = 0V, TJ = 25°C
⯠⯠-60 µA VDS = -50V, VGS = 0V, TJ = 125°C
⯠⯠-100 nA VDS = -25V, VGS = 0V, TJ = 25°C
⯠⯠±10 nA VGS = ±20V, VDS = 0V
VGS(th) -0.8 -1.6 -2.0
RDS (ON) â¯
6
10
gFS 0.05 ⯠â¯
V VDS = VGS, ID = -1mA
Ω VGS = -5V, ID = -0.100A
S VDS = -25V, ID = -0.1A
Ciss
Coss
Crss
⯠⯠45 pF
⯠⯠25 pF VDS = -25V, VGS = 0V, f = 1.0MHz
⯠⯠12 pF
tD(ON)
tD(OFF)
⯠10 â¯
⯠18 â¯
ns VDD = -30V, ID = -0.27A,
ns RGEN = 50Ω, VGS = -10V
Notes:
1. RGS ⤠20KΩ.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Short duration pulse test used to minimize self-heating effect.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BSS84DW
Document number: DS30204 Rev. 13 - 2
1 of 3
www.diodes.com
November 2007
© Diodes Incorporated
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