BSS84DW_1 Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SPICE MODEL: BSS84DW
BSS84DW
DUAL P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Lead Free/RoHS Compliant (Note 3)
A
D₂
G₁
S₁
BC
Mechanical Data
· Case: SOT-363
S₂
G₂
D₁
G
H
· Case Material: Molded Plastic. UL Flammability
K
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
J
· Terminals: Solderable per MIL-STD-202, Method 208
DF
L
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
· Terminal Connections: See Diagram
D₂
G₁
S₁
· Marking Code (See Page 2): K84
· Ordering & Date Code Information: See Page 2
· Weight: 0.006 grams (approx.)
S₂
G₂
D₁
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
M
H
1.80 2.20
J
¾
0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current (Note 2)
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Symbol
V_DSS
V_DGR
V_GSS
ID
Pd
RqJA
T_j, T_STG
Value
-50
-50
±20
-130
300
417
-55 to +150
Note:
1. R_GS £ 20KW.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
Units
V
V
V
mA
mW
°C/W
°C
DS30204 Rev. 10 - 2
1 of 4
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BSS84DW
ã Diodes Incorporated