BSS84DW Datasheet, PDF (1/2 Pages) Diodes Incorporated – DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
Mechanical Data
· Case: SOT-363, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: KXX: Product marking code
YY: Date code
· Marking Code: K84
· Weight: 0.006 grams (approx.)
BSS84DW
DUAL P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
A
D₂
G₁
S₁
KXX YY
BC
S₂
G₂
D₁
H
K
J
DF
L
D₂
G₁
S₁
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
H
1.80 2.20
J
¾
0.10
K
0.90 1.00
M
L
0.25 0.40
M
0.10 0.25
All Dimensions in mm
S₂
G₂
D₁
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 3)
Gate-Source Voltage
Continuous
Drain Current (Note 1)
Continuous
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
VDSS
V_DGR
V_GSS
I_D
P_d
R_qJA
T_j, T_STG
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
3. R_GS £ 20KW.
BSS84DW
-50
-50
±20
-130
200
625
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
DS30204 Rev. C-2
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BSS84DW