BSS84 Datasheet, PDF (1/2 Pages) NXP Semiconductors – P-channel enhancement mode vertical D-MOS transistor

BSS84
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
A
· Low Input Capacitance
D
· Fast Switching Speed
BC
· Low Input/Output Leakage
G TOP VIEW S
Mechanical Data
E
D
G
H
· Case: SOT-23, Molded Plastic
· Case material - UL Flammability Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
K
M
J
Drain
L
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking (See Page 2): K84
Gate
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approx.)
Source
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS £ 20KW
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Symbol
VDSS
V_DGR
VGSS
I_D
P_d
R_qJA
T_j, T_STG
BSS84
-50
-50
±20
-130
300
417
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BV_DSS -50
¾
I_DSS
¾
¾
IGSS
¾
¾
¾
V VGS = 0V, ID = -250µA
¾
-15 µA V_DS = -50V, V_GS = 0V, T_J = 25°C
¾
-60 ^µA VDS = -50V, VGS = 0V, TJ = 125°C
¾
-100 nA VDS = -25V, VGS = 0V, TJ = 25°C
¾
±10 nA VGS = ±20V, VDS = 0V
VGS(th) -0.8
¾
-2.0 V VDS = VGS, ID = -1mA
RDS (ON) ¾
¾
10
W VGS = -5V, ID = 0.100A
g_FS
.05
¾
¾
S VDS = -25V, ID = 0.1A
C_iss
¾
¾
45 pF
C_oss
¾
¾
25
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
Crss
¾
¾
12 pF
tD(ON)
¾
10
¾
ns _{VDD = -30V, ID = -0.27A,}
t_D(OFF)
¾
18
¾
ns ^{RGEN = 50W, VGS = -10V}
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30149 Rev. 5 - 2
1 of 2
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BSS84