BSS138_1 Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SPICE MODEL: BSS138
BSS138
Features
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
A
D
· Fast Switching Speed
BC
· Low Input/Output Leakage
· Lead Free/RoHS Compliant (Note 3)
· Qualified to AEC-Q101 Standards for High Reliability
G TOP VIEW S
E
D
G
H
Mechanical Data
· Case: SOT-23
K
M
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
J
L
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Solderable per MIL-STD-202, Method 208
Drain
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
· Terminal Connections: See Diagram
Gate
· Marking (See Page 2): K38
· Ordering & Date Code Information: See Page 2
· Weight: 0.008 grams (approximate)
Source
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS £ 20KW
Gate-Source Voltage
Continuous
Drain Current
Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_DSS
V_DGR
V_GSS
I_D
P_d
RqJA
Tj, TSTG
BSS138
50
50
±20
200
300
417
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS
50
I_DSS
¾
I_GSS
¾
75
¾
V VGS = 0V, ID = 250mA
¾
0.5
µA VDS = 50V, VGS = 0V
¾ ±100 nA VGS = ±20V, VDS = 0V
V_GS(th)
0.5
1.2
1.5
V VDS = VGS, ID = 250mA
R_{DS (ON)} ¾
1.4 3.5
W VGS = 10V, ID = 0.22A
gFS
100
¾
¾
mS VDS = 25V, ID = 0.2A, f = 1.0KHz
C_iss
¾
¾
50
pF
Coss
¾
¾
25
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
C_rss
¾
¾
8.0
pF
tD(ON)
¾
¾
20
ns _{VDD = 30V, ID = 0.2A,}
t_D(OFF)
¾
¾
20
ns ^{RGEN = 50W}
Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS30144 Rev. 11 - 2
1 of 5
BSS138
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