BSS138W_2 Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead Free/RoHS Compliant (Note 4)
• "Green" Device (Note 5 and 6)
BSS138W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Mechanical Data
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SOT-323
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
Drain
D
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current (Note 2)
Continuous
Continuous
Gate
Source
Equivalent Circuit
G
S
TOP VIEW
Symbol
V_DSS
V_DGR
V_GSS
I_D
Value
50
50
±20
200
Units
V
V
V
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
200
625
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BV_DSS 50 75
⎯
V V_GS = 0V, I_D = 250μA
I_DSS
⎯ ⎯ 0.5 µA V_DS = 50V, V_GS = 0V
I_GSS
⎯ ⎯ ±100 nA V_GS = ±20V, V_DS = 0V
V_GS(th) 0.5 1.2 1.5 V V_DS = V_GS, I_D = 250μA
R_{DS (ON)} ⎯ 1.4 3.5 Ω V_GS = 10V, I_D = 0.22A
g_FS
100 ⎯ ⎯ mS V_DS = 25V, I_D = 0.2A, f = 1.0KHz
C_iss
C_oss
C_rss
⎯ ⎯ 50 pF
⎯ ⎯ 25 pF VDS = 10V, VGS = 0V, f = 1.0MHz
⎯ ⎯ 8.0 pF
t_D(ON)
⎯
⎯ 20 ns V_DD = 30V, I_D = 0.2A,
t_D(OFF)
⎯
⎯
20
ns RGEN = 50Ω
Notes:
1. R_GS ≤ 20KΩ.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration pulse test used to minimize self-heating effect.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BSS138W
Document number: DS30206 Rev. 9 - 2
1 of 4
www.diodes.com
October 2007
© Diodes Incorporated