BSS138W Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BSS138W
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
A
D
BC
Mechanical Data
G
S
G
· Case: SOT-323, Molded Plastic
H
· Case Material - UL Flammability Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A ^K
M
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
J
DE
L
Drain
· Marking Code (See Page 2): K38
· Ordering & Date Code Information: See Page 2
· Weight: 0.006 grams (approx.)
Gate
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Source
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current (Note 2)
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Symbol
V_DSS
VDGR
V_GSS
ID
Pd
R_qJA
Tj, TSTG
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
BSS138W
50
50
±20
200
200
625
-55 to +150
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
H
1.80 2.20
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.18
a
0°
8°
All Dimensions in mm
Units
V
V
V
mA
mW
°C/W
°C
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS 50
IDSS
¾
IGSS
¾
75
¾
V VGS = 0V, ID = 250mA
¾
0.5
µA VDS = 50V, VGS = 0V
¾ ±100 nA VGS = ±20V, VDS = 0V
VGS(th) 0.5
1.2
1.5
V VDS = VGS, ID = -250mA
R_{DS (ON)} ¾
1.4 3.5
W VGS = 10V, ID = 0.22A
gFS
100
¾
¾
mS VDS =25V, ID = 0.2A, f = 1.0KHz
Ciss
¾
¾
50
pF
Coss
¾
¾
25
pF
V_DS = 10V, V_GS = 0V
f = 1.0MHz
Crss
¾
¾
8.0
pF
t_D(ON)
¾
¾
20
ns _{VDD = 30V, ID = 0.2A,}
t_D(OFF)
¾
¾
20
ns ^{RGEN = 50W}
Note: 1. RGS £ 20KW.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration test pulse used to minimize self-heating effect.
DS30206 Rev. 3 - 2
1 of 5
www.diodes.com
BSS138W