BSS138DW_09 Datasheet, PDF (1/5 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BSS138DW
Features
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Mechanical Data
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Available in Lead Free/RoHS Compliant Version (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Notes 5 and 6)
• Case: SOT-363
• Case Material: Molded Plastic. “Green” Molding Compound
(Note 6). UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-363
D₂
G₁
S₁
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 3)
Gate-Source Voltage
Drain Current (Note 1)
Continuous
Continuous
S₂
G₂
D₁
TOP VIEW
Internal Schematic
Symbol
V_DSS
V_DGR
V_GSS
I_D
BSS138DW
50
50
±20
200
Units
V
V
V
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
BSS138DW
200
625
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BV_DSS 50 75
⎯
V V_GS = 0V, I_D = 250μA
I_DSS
⎯ ⎯ 0.5 µA V_DS = 50V, V_GS = 0V
I_GSS
⎯ ⎯ ±100 nA V_GS = ±20V, V_DS = 0V
V_GS(th) 0.5 1.2 1.5 V V_DS = V_GS, I_D = 250μA
R_{DS (ON)} ⎯ 1.4 3.5 Ω V_GS = 10V, I_D = 0.22A
g_FS
100 ⎯ ⎯ mS V_DS =25V, I_D = 0.2A, f = 1.0KHz
C_iss
C_oss
C_rss
⎯ ⎯ 50 pF
⎯ ⎯ 25 pF V_DS = 10V, V_GS = 0V, f = 1.0MHz
⎯ ⎯ 8.0 pF
t_D(ON)
⎯
⎯ 20 ns V_DD = 30V, I_D = 0.2A,
t_D(OFF)
⎯
⎯
20
ns R_GEN = 50Ω
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. R_GS ≤ 20KΩ.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BSS138DW
Document number: DS30203 Rev. 12 - 2
1 of 5
www.diodes.com
September 2009
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