BSS138 Datasheet, PDF (1/5 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

BSS138
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
A
D
BC
Mechanical Data
G TOP VIEW S
E
D
· Case: SOT-23, Molded Plastic
G
H
· Case Material - UL Flammability Classification
Rating 94V-0
K
M
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
J
L
Drain
· Terminal Connections: See Diagram
· Marking (See Page 2): K38
· Ordering & Date Code Information: See Page 2
Gate
· Weight: 0.008 grams (approx.)
Source
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 20KW
Gate-Source Voltage
Continuous
Drain Current
Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
VDSS
V_DGR
VGSS
I_D
P_d
R_qJA
T_j, T_STG
BSS138
50
50
±20
200
300
417
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS 50
IDSS
¾
IGSS
¾
75
¾
V VGS = 0V, ID = 250mA
¾
0.5
µA VDS = 50V, VGS = 0V
¾ ±100 nA VGS = ±20V, VDS = 0V
VGS(th) 0.5
1.2
1.5
V VDS = VGS, ID =-250mA
R_{DS (ON)} ¾
1.4 3.5
W VGS = 10V, ID = 0.22A
gFS
100
¾
¾
mS VDS =25V, ID = 0.2A, f = 1.0KHz
Ciss
¾
¾
50
pF
Coss
¾
¾
25
pF
V_DS = 10V, V_GS = 0V
f = 1.0MHz
Crss
¾
¾
8.0
pF
t_D(ON)
¾
¾
20
ns _{VDD = 30V, ID = 0.2A,}
t_D(OFF)
¾
¾
20
ns ^{RGEN = 50W}
Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to miminize self-heating effect.
DS30144 Rev. 6 - 2
1 of 5
BSS138
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