BSS123_1 Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SPICE MODEL: BSS123
BSS123
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
A
D
· High Drain-Source Voltage Rating
BC
· Lead Free/RoHS Compliant (Note 2)
G TOP VIEW S
Mechanical Data
E
D
G
· Case: SOT-23
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Solderable per MIL-STD-202, Method 208
H
K
M
J
L
Drain
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
· Terminal Connections: See Diagram
Gate
· Marking: K23 (See Page 3)
· Ordering & Date Code Information: See Page 3
· Weight: 0.008 grams (approximate)
Source
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 20KW
Gate-Source Voltage
Continuous
Drain Current (Note 1)
Continuous
Pulsed
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_DSS
VDGR
VGSS
I_D
I_DM
P_d
R_qJA
T_j, T_STG
BSS123
100
100
±20
170
680
300
417
-55 to +150
Note:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Units
V
V
V
mA
mW
°C/W
°C
DS30366 Rev. 6 - 2
1 of 4
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BSS123
ã Diodes Incorporated