BSS123_08 Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BSS123
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• High Drain-Source Voltage Rating
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
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SOT-23
Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Drain
D
TOP VIEW
Gate
Source
Equivalent Circuit
G
S
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS ≤ 20KΩ
Gate-Source Voltage
Drain Current (Note 1)
Continuous
Continuous
Pulsed
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DM
Value
100
100
±20
170
680
Units
V
V
V
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
300
417
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Drain-Source Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Rise Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BV_DSS 100 ⎯ ⎯
I_DSS
⎯
⎯
1.0
10
I_GSSF
⎯ ⎯ 50
V V_GS = 0V, I_D = 250μA
µA VDS = 100V, VGS = 0V
nA _{VDS = 20V, VGS = 0V}
nA V_GS = 20V, V_DS = 0V
V_GS(th)
R_{DS (ON)}
g_FS
V_SD
0.8 1.4 2.0
⎯ ⎯ 6.0
⎯ ⎯ 10
80 370 ⎯
⎯ 0.84 1.3
V V_DS = V_GS, I_D = 1mA
Ω
V_GS = 10V, I_D = 0.17A
V_GS = 4.5V, I_D = 0.17A
mS V_DS = 10V, I_D = 0.17A, f = 1.0KHz
V V_GS = 0V, I_S = 0.34A
C_iss
C_oss
C_rss
⎯ 29 60
⎯ 10 15
⎯2 6
pF
pF V_DS = 25V, V_GS = 0V, f = 1.0MHz
pF
t_r
t_f
t_D(ON)
t_D(OFF)
⎯⎯ 8
⎯ ⎯ 16
⎯⎯ 8
⎯ ⎯ 13
ns
ns V_DD = 30V, I_D = 0.28A,
ns RGEN = 50Ω, VGS = 10V
ns
Notes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
BSS123
Document number: DS30366 Rev.8 - 2
1 of 3
www.diodes.com
May 2008
© Diodes Incorporated