BSS123W Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BSS123W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· High Drain-Source Voltage Rating
Mechanical Data
· Case: SOT-323, Molded Plastic
· Plastic Material - UL Flammability Classification _K
Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
J
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: K23 (See Page 3)
· Weight: 0.006 grams (approx.)
A
D
BC
G
S
G
H
DE
L
Drain
Gate
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
M
G
1.20 1.40
H
1.80 2.20
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.18
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Source
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 20KW
Gate-Source Voltage
Continuous
Drain Current (Note 1)
Continuous
Pulsed
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_DSS
V_DGR
VGSS
ID
IDM
P_d
RqJA
T_j, T_STG
Value
100
100
±20
170
680
200
625
-55 to +150
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
Units
V
V
V
mA
mW
°C/W
°C
DS30368 Rev. 2 - 2
1 of 3
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BSS123W