BSS123 Datasheet, PDF (1/3 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

BSS123
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· High Drain-Source Voltage Rating
A
D
BC
Mechanical Data
· Case: SOT-23, Molded Plastic
· Case material - UL Flammability Rating 94V-0
G TOP VIEW S
E
D
G
H
· Moisture sensitivity: Level 1 per J-STD-020A
K
M
· Terminals: Solderable per MIL-STD-202,
Method 208
J
L
· Terminal Connections: See Diagram
Drain
· Marking: K23 (See Page 3)
· Ordering & Date Code Information: See Page 3
· Weight: 0.008 grams (approx.)
Gate
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS £ 20KW
Gate-Source Voltage
Continuous
Drain Current (Note 1)
Continuous
Pulsed
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_DSS
V_DGR
VGSS
ID
IDM
P_d
RqJA
T_j, T_STG
Source
BSS123
100
100
±20
170
680
300
417
-55 to +150
Note: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Units
V
V
V
mA
mW
°C/W
°C
DS30366 Rev. 3 - 2
1 of 3
www.diodes.com
BSS123