BSN20 Datasheet, PDF (1/6 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

BSN20
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
V_(BR)DSS
50V
R_DS(ON)
1.8Ω @ V_GS = 10V
2.0Ω @ V_GS = 4.5V
I_D
T_A = 25°C
500mA
450mA
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R_DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Backlighting
• DC-DC Converters
• Power management functions
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
SOT23
Drain
Top View
Gate
Source
Equivalent Circuit
Ordering Information (Note 3)
Notes:
Part Number
BSN20-7
Case
SOT23
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
D
G
S
Top View
Packaging
3000/Tape & Reel
N20
N20 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2009
W
Jan
Feb
1
2
2010
X
Mar
3
2011
Y
Apr
May
4
5
2012
Z
Jun
Jul
6
7
2013
A
Aug
Sep
8
9
2014
B
Oct
O
2015
C
Nov
Dec
N
D
BSN20
Document number: DS31898 Rev. 6 - 2
1 of 6
www.diodes.com
July 2011
© Diodes Incorporated