BS870_08 Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BS870
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
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SOT-23
Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Drain
D
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS ≤ 1.0MΩ
Gate-Source Voltage
Drain Current (Note 1)
Continuous
Continuous
Gate
Source
Equivalent Circuit
G
S
TOP VIEW
Symbol
V_DSS
V_DGR
V_GSS
I_D
Value
60
60
±20
250
Units
V
V
V
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
300
417
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min
Typ
Max
Unit
Test Condition
BV_DSS
60
I_DSS
⎯
I_GSS
⎯
80
⎯
V
V_GS = 0V, I_D = 100μA
⎯
0.5
µA
V_DS = 25V, V_GS = 0V
⎯
±10
nA
V_GS = ±15V, V_DS = 0V
V_GS(th)
1.0
2.0
3.0
V
V_DS = V_GS, I_D = 250μA
R_{DS (ON)}
⎯
3.5
5.0
Ω
V_GS = 10V, I_D = 0.2A
I_D(ON)
⎯
1.0
0.5
A
V_GS = 10V, V_DS = 7.5V
g_FS
80
⎯
⎯
mS V_DS =10V, I_D = 0.2A
C_iss
⎯
C_oss
⎯
C_rss
⎯
22
50
11
25
2.0
5.0
pF
pF
V_DS = 10V, V_GS = 0V
f = 1.0MHz
pF
t_D(ON)
⎯
2.0
20
ns
V_ES = 10V, R_L = 150Ω,
t_D(OFF)
⎯
5.0
20
ns
V_DS = 10V, R_D = 100Ω
Notes:
1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
BS870
Document number: DS11302 Rev. 14 - 2
1 of 3
www.diodes.com
May 2008
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