BS870_ Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SPICE MODEL: BS870
BS870
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
A
D
· Low Input/Output Leakage
· Lead Free/RoHS Compliant (Note 2)
Mechanical Data
BC
G TOP VIEW S
E
D
G
· Case: SOT-23
H
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
K
M
J
L
· Terminal Connections: See Diagram
· Terminals: Solderable per MIL-STD-202, Method 208
Drain
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
· Marking (See Page 2): K70
· Ordering & Date Code Information: See Page 2
Gate
· Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Source
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS £ 1.0MW
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Symbol
VDSS
V_DGR
V_GSS
I_D
P_d
R_qJA
T_j, T_STG
BS870
60
60
±20
250
300
417
-55 to +150
Note:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Units
V
V
V
mA
mW
K/W
°C
DS11302 Rev. 11 - 2
1 of 4
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BS870
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