BS870 Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BS870
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
Mechanical Data
· Case: SOT-23, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: S70, K70
· Weight: 0.008 grams (approx.)
A
D
TOP VIEW
BC
G
S
E
D
G
H
K
J
L
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
SOT-23
Dim Min Max
A
0.37 0.51
B
1.19 1.40
C
2.10 2.50
D
0.89 1.05
E
0.45 0.61
G
1.78 2.05
H
2.65 3.05
J
0.013 0.15
M
K
0.89 1.10
L
0.45 0.61
M 0.076 0.178
All Dimensions in mm
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R_GS £ 1.0MW
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Symbol
VDSS
VDGR
V_GSS
I_D
P_d
R_qJA
T_j, T_STG
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ
BV_DSS
60
80
I_DSS
¾
¾
I_GSS
¾
¾
V_GS(th)
1.0
2.0
R_{DS (ON)} ¾
3.5
I_D(ON)
¾
1.0
g_FS
80
¾
C_iss
¾
22
C_oss
¾
11
Crss
¾
2.0
t_D(ON)
¾
2.0
t_D(OFF)
¾
5.0
BS870
60
60
±20
250
310
400
-55 to +150
Units
V
V
V
mA
mW
K/W
°C
Max Unit
Test Condition
¾
V VGS = 0V, ID = 100mA
0.5
µA VDS = 25V, VGS = 0V
±10
nA VGS = ±15V, VDS = 0V
3.0
V VDS = VGS, ID =-250mA
5.0
W VGS = 10V, ID = 0.2A
0.5
A VGS = 10V, VDS = 7.5V
¾
mS VDS =10V, ID = 0.2A
50
pF
25
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
5.0
pF
20
ns _{VES = 10V, RL = 150W,}
20
ns ^{VDS = 10V, RD = 100W}
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
DS11302 Rev. G-2
1 of 2
BS870