BS850 Datasheet, PDF (1/3 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

BS850
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Features
· High Input Impedance
· Fast Switching Speed
· CMOS Logic Compatible Input
· No Thermal Runaway or Secondary
Breakdown
· Surface Mount Package Ideally Suited
for Automatic Assembly
Mechanical Data
· Case: SOT-23, Plastic
· Terminals: Solderable per MIL-STD-202
Method 208
· Pin Connection: See Diagram
· Marking: S50
· Weight: 0.008 grams (approx.)
DISCONTINUED,
FOR NEW DESIGN
USE BSS84
A
D
TOP VIEW
BC
G
S
E
D
G
H
K
J
L
SOT-23
Dim Min Max
A
0.37 0.51
B
1.19 1.40
C
2.10 2.50
D
0.89 1.05
E
0.45 0.61
G
1.78 2.05
H
2.65 3.05
J 0.013 0.15
M
K
0.89 1.10
L
0.45 0.61
M 0.076 0.178
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous)
Power Dissipation @TC = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
–V_DSS
–V_DGS
V_GS
–I_D
P_d
Tj, TSTG
Value
60
60
±20
250
310
-65 to+150
Unit
V
V
V
mA
mW
°C
Inverse Diode ^{@ TA = 25°C unless otherwise specified}
Characteristic
Maximum Forward Current (continuous)
Forward Voltage Drop (typ.) @ V_GS = 0, I_F = 0.12A, T_j = 25°C
Symbol
Value
Unit
I_F
0.30
A
V_F
0.85
V
Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5 cm² area.
DS11402 Rev. F-3
1 of 3
BS850