BS817 Datasheet, PDF (1/2 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

BS817
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Features
· High Breakdown Voltage
· High Input Impedance
· Fast Switching Speed
· Specially Suited for Telephone Subsets
· Ideal for Automated Surface Mount Assembly
Mechanical Data
· Case: SOT-23, Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections (see Diagram)
· Marking: S17
· Weight: 0.008 grams (approx.)
A
D
TOP VIEW
BC
G
S
E
D
G
H
K
J
L
SOT-23
Dim Min Max
A
0.37 0.51
B
1.19 1.40
C
2.10 2.50
D
0.89 1.05
E
0.45 0.61
G
1.78 2.05
H
2.65 3.05
J
M_K
0.013 0.15
0.89 1.10
L
0.45 0.61
M 0.076 0.178
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed) (Note 2)
Drain Current (continuous)
Power Dissipation @ T_{C = 50°C (Note 1)}
Operating and Storage Temperature Range
Symbol
-V_DSS
-V_DGS
V_GS
-I_D
Pd
T_j, T_STG
Value
200
200
±20
100
310
-55 to +150
Unit
V
V
V
mA
mW
°C
Inverse Diode ^{@ TA = 25°C unless otherwise specified}
Characteristic
Max Forward Current (continuous)
Forward Voltage Drop (typical)
@ V_GS = 0, I_F = 0.3A, T_j = 25°C
Symbol
Value
Unit
I_F
0.3
A
V_F
0.85
V
Notes: 1. Device mounted on Ceramic Substrate 0.7mm x 2.5cm² area.
2. Pulse Test: Pulse width = 80µs, duty cycle = 1%.
DS11401 Rev. D-3
1 of 2
BS817