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BS250 Datasheet, PDF (1/2 Pages) NXP Semiconductors – P-channel enhancement mode vertical D-MOS transistor
BS250
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Features
· High Input Impedance
· Fast Switching Speed
· CMOS Logic Compatible Input
· No Thermal Runaway or Secondary Breakdown
Mechanical Data
· Case: TO-92, Plastic
· Leads: Solderable per MIL-STD-202,
Method 208
· Pin Connection: See Diagram
· Approx Weight: 0.18 grams
E
A
B
C
D
BOTTOM S G D
VIEW
H
H
G
TO-92
Dim
Min
Max
A
4.45
4.70
B
4.46
4.70
C
12.7
—
D
0.41
0.63
E
3.43
3.68
G
2.42
2.67
H
1.14
1.40
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation @TC = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
–VDSS
–VDGS
VGS
–ID
Pd
Tj, TSTG
Value
60
60
±20
250
830
-55 +150
Unit
V
V
V
mA
mW
°C
Inverse Diode @ TA = 25°C unless otherwise specified
Characteristic
Maximum Forward Current (continuous)
Forward Voltage Drop (Typ.) @ VGS = 0, IF = 0.15A, Tj = 25°C
Symbol
Value
Unit
IF
0.15
A
VF
0.85
V
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Current
Drain-Source Cutoff Current
Drain-Source ON Resistance
Thermal Resistance, Junction to Ambient Air
Forward Transconductance
Input Capacitance
Switching Times
Turn On Time
Turn Off Time
Symbol Min Typ Max Unit
Test Condition
-V(BR)DSS 60
70
—
V
ID = 100µA, VGS = 0
-VGS(th)
—
1.0 3.0
V VGS = VDS, –ID = 1.0mA
-IGSS
—
—
20
nA -VGS = 15V, VDS = 0
-IDSS
—
—
0.5
µA -VDS = 25V, VGS = 0
rDS (ON)
—
3.5 5.0
W -VGS = 10V, –ID = 0.2A
RqJA
—
— 150 K/W Note 1
gFS
—
150
—
mS
-VDS = 10V, –ID = 0.2A,
f = 1.0MHz
Ciss
—
60
—
pF
-VDS = 10V, VGS = 0,
f = 1.0MHz
-VGS = 10V, –VDS = 10V,
ton
—
5
—
ns RD = 100W
toff
—
25
—
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
DS21902 Rev. D-3
1 of 2
BS250