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BS208 Datasheet, PDF (1/2 Pages) NXP Semiconductors – P-channel enhancement mode vertical D-MOS transistor
BS208
P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Features
· High Breakdown Voltage
· High Input Impedance
· Fast Switching Speed
· Low Drain-Source On-Resistance
· Specially Suited for Telephone Subsets
Mechanical Data
· Case: TO-92, Plastic
· Leads: Solderable per MIL-STD-202,
Method 208
· Pin Connections: See Diagram
· Weight: 0.18 grams (approx.)
E
A
B
C
D
BOTTOM S G D
VIEW
H
H
G
TO-92
Dim Min Max
A
4.45 4.70
B
4.46 4.70
C
12.7
—
D
0.41 0.63
E
3.43 3.68
G
2.42 2.67
H
1.14 1.40
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Drain-Source-Voltage
Drain-Gate-Voltage
Gate-Source-Voltage (pulsed) (Note 2)
Drain-Current (continuous)
Power Dissipation @TC = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
-VDSS
-VDGS
VGS
-ID
Pd
Tj, TSTG
Value
240
200
±20
200
830
–55 to +150
Unit
V
V
V
mA
mW
°C
Inverse Diode @ TA = 25°C unless otherwise specified
Characteristic
Maximum Forward Current (continuous)
Forward Voltage Drop (Typical)
@ VGS = 0, IF = 0.75A, Tj = 25°C
Symbol
Value
Unit
IF
0.22
A
VF
0.85
V
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Breakdown Voltage
Gate-Body Leakage Current
Drain-Source Cutoff Current
Gate-Source Threshold Voltage
Drain-Source ON Resistance
Thermal Resistance Junction to Ambient
Input Capacitance
Output Capacitance
Feedback Capacitance
Symbol Min Typ Max Unit
Test Condition
-V(BR)DSS 200 230
—
V -ID = 100µA, VGS = 0
-IGSS
—
—
10
nA -VGS = 15V, VDS = 0
-IDSS
-IDSX
—
—
1.0
25
µA
-VDS =130V, VGS = 0
-VDS = 10V, -VGS = 0.2V
-VGS(th)
—
2.8 4.0
V VGS = VDS, -ID = 1.0mA
rDS(ON)
—
7.0
14
W -VGS = 10V, -ID = 100 mA
RqJA
Ciss
Coss
Crss
—
— 150 K/W Note 1
270
—
35
—
6.0
pF -VDS = 20V, VGS= 0, f =1.0MHz
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
2. Pulse Test: Pulse width = 80µs, duty factor = 1%.
DS21901 Rev. E-3
1 of 2
BS208