BS170 Datasheet, PDF (1/2 Pages) Motorola, Inc – TMOS FET Switching(N-Channel-Enhancement)

BS170
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
Features
· High Input Impedance
· Fast Switching Speed
· CMOS Logic Compatible Input
· No Thermal Runaway or Secondary
Breakdown
Mechanical Data
· Case: TO-92, Plastic
· Leads: Solderable per MIL-STD-202,
Method 208
· Pin Connection: See Diagram
· Weight: 0.18 grams (approx.)
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation @TC = 25°C (Note 1)
Junction Temperature
Operating and Storage Temperature Range
E
A
B
C
D
BOTTOM S G D
VIEW
H
H
G
TO-92
Dim Min Max
A
4.45 4.70
B
4.46 4.70
C
12.7
—
D
0.41 0.63
E
3.43 3.68
G
2.42 2.67
H
1.14 1.40
All Dimensions in mm
Symbol
V_DSS
V_DGS
V_GS
I_D
P_d
T_j
Tj, TSTG
Value
60
60
±20
300
830
150
-55 to +150
Unit
V
V
V
mA
mW
°C
°C
Inverse Diode
@ T_A = 25°C unless otherwise specified
Characteristic
Maximum Forward Current (continuous)
Forward Voltage Drop (typ.) @ V_GS = 0, I_F = 0.5A, T_j = 25°C
Symbol
Value
Unit
I_F
0.50
A
V_F
0.85
V
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Current
Drain-Cutoff Current
Drain-Source ON Resistance
Thermal Resistance, Junction to Ambient Air
Forward Transconductance
Input Capacitance
Turn On Time
Turn Off Time
Symbol Min Typ Max Unit
Test Condition
V_(BR)DSS
60
90
—
V
ID = 100µA, VGS = 0
V_GS(th)
0.8
1.0
3.0
V
VGS = VDS, ID = 1.0mA
I_GSS
—
—
10
nA VGS = 15V, VDS = 0
I_DSS
—
—
0.5
µA VDS = 25V, VGS = 0
r_{DS (ON)}
—
3.5
5.0
W
VGS = 10V, ID = 0.2mA
R_qJA
—
—
150 K/W Note 1
g_FS
—
200
—
mm VDS = 10V, ID = 0.2A, f = 1MHz
C_iss
—
60
—
pF VDS = 10V, VGS = 0, f =1.0MHz
t_on
t_off
—
5.0
15
—
ns
VGS = 10V, VDS = 10V,
R_D = 100W
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
DS21802 Rev. D-3
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BS170