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BS107 Datasheet, PDF (1/2 Pages) Motorola, Inc – TMOS Switching(N-Channel-Enhancement)
BS107
N–CHANNEL ENHANCEMENT MODE TRANSISTOR
Features
· High Breakdown Voltage
· High Input Impedance
· Fast Switching Speed
· Specially Suited for Telephone Subsets
E
A
B
Mechanical Data
C
· Case: TO-92 Plastic
· Leads: Solderable per
MIL-STD-202, Method 208
· Pin Connections: See Diagram
· Weight: 0.18 grams (approx.)
D
BOTTOM S G D
VIEW
H
H
G
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Drain-Source-Voltage
Drain-Gate-Voltage
Gate-Source-Voltage (pulsed) (Note 2)
Drain-Current (continuous)
Power Dissipation @TC = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
VDSS
VDGS
VGS
ID
Pd
Tj, TSTG
Value
200
200
±20
120
830
-55 to +150
TO-92
Dim Min Max
A
4.45 4.70
B
4.46 4.70
C
12.7
—
D
0.41 0.63
E
3.43 3.68
G
2.42 2.67
H
1.14 1.40
All Dimensions in mm
Unit
V
V
V
mA
mW
°C
Inverse Diode @ TA = 25°C unless otherwise specified
Characteristic
Maximum Forward Current (continuous)
Forward Voltage Drop (typical)
@ VGS = 0, IF = 0.5A, Tj = 25°C
Symbol
Value
Unit
IF
0.5
A
VF
0.85
V
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Breakdown Voltage
Gate-Body Leakage Current
Drain-Cutoff Current
Gate-Source Threshold Voltage
Drain-Source ON Resistance
Thermal Resistance, Junction to Ambient Air
Input Capacitance
Output Capacitance
Feedback Capacitance
Turn On Time
Turn Off Time
Symbol Min
V(BR)DSS 200
IGSS
—
IDSS
IDSX
—
VGS(th)
—
rDS(ON)
—
RqJA
—
Ciss
Coss
—
Crss
ton
toff
—
Typ
230
—
—
1.8
18
—
58
8.0
1.5
5.0
15
Max
—
10
30
1.0
3
28
150
—
—
Unit
V
Test Condition
ID = 100µA, VGS = 0
nA VGS = 15V, VDS = 0
nA VDS =130V, VGS = 0
µA VDS = 70V, VGS = 0.2V
V VGS = VDS, ID = 1.0mA
W VGS = 2.8V, ID = 20 mA
K/W (Note 1)
pF VDS = 20V, VGS = 0,f =1.0MHz
ns
VGS = 10V, VDS = 10V,
RD = 100W
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
2. Pulse Test: Pulse width = 80µs, duty factor = 1%.
DA21804 Rev. C-3
1 of 2
BS107