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| BCX41_15 Datasheet, PDF (1/1 Pages) Diodes Incorporated – SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 ÂOCTOBER 1995 7
PARTMARKING DETAIL Â EK
BCX41
2
1
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
VCES
125
V
Collector-Emitter Voltage
VCEO
125
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
1
A
Continuous Collector Current
IC
800
mA
Base Current
IB
100
mA
Power Dissipation at Tamb=25°C
PTOT
330
mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off ICES
Current
Collector Cut-Off
ICEX
Current
Emitter Cut-Off
IEBO
Current
100 nA VCE =100V
10 µA VCE =100V, Tamb =150°C
10 µA VCE =100V,VBE=0.2V,Tamb =85°C
75 µA VCE=100V,VBE=0.2V,
Tamb=125°C
100 nA VEB =4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.9 V IC =300mA, IB =30mA *
Base-Emitter
Saturation Voltage
VBE(sat)
1.4 V IC =300mA, IB =30mA *
Static Forward
hFE
Current Transfer Ratio
Transition Frequency fT
25
63
40
100
MHz
IC =100µA, VCE =1V
IC =100mA, VCE =1V *
IC =200mA, VCE =1V *
IC =10mA, VCE =5V
f =20MHz
Output Capacitance Cobo
12
pF VCB =10V, IE=Ie=0, f =1MHz
* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
3 - 33
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