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BCW61 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 Â FEBRUARY 95
PARTMARKING DETAIL Â
BCW61A
 BA
BCW61B
 BB
BCW61C
 BC
BCW61D
 BD
BCW61AR
BCW61BR
BCW61CR
BCW61DR
 CA
 CB
 CC
 CD
COMPLEMENTARY TYPE Â BCW60
BCW61
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
IC
IB
PTOT
Tj:Tstg
-32
V
-32
V
-5
V
-200
mA
-50
mA
330
mW
-55 to +150
°C
FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz)
hFE Group A
hFE Group B
hFE GroupC
hFE Group D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h11e 1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12 kâ¦
h12e
1.5
2
2
3
10-4
h21e
200
260
330
520
h22e
18 30
24 50
30 60
50 100 µS
+VBB
VCC(-10V)
1µsec
-10V
tr < 5nsec
Mark/Space ratio < 0.01
Zs=50â¦
R1
50â¦
R2
RL
BAY 63
tr < 5nsec
Zin ⥠100kâ¦
Oscilloscope
PAGE NO
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