BC857BS_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

BC857BS
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
• Ideally Suited for Automated Insertion
• For Switching and AF Amplifier Applications
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 4 and 5)
A
BC
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
Mechanical Data
C
2.00 2.20
• Case: SOT-363
H
• Case Material: Molded Plastic. UL Flammability
D
0.65 Nominal
F
0.30 0.40
Classification Rating 94V-0
K
M
H
1.80 2.20
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
J
• Lead Free Plating (Matte Tin Finish annealed over Alloy
DF
L
J
⎯
0.10
K
0.90 1.00
42 leadframe).
L
0.25 0.40
• Terminal Connections: See Diagram
C₂
B₁
E₁
M
0.10 0.25
• Marking: K3W (See Page 3)
• Ordering Information (See Page 3)
α
0°
8°
• Weight: 0.006 grams
E₂
B₂
C₁
All Dimensions in mm
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation at T_SB = 50°C
Operating and Storage Temperature Range
(Note 1)
(Note 1)
(Note 1)
(Note 1)
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_d
T_j, T_STG
Value
-50
-45
-5.0
-100
-200
-200
200
-55 to +125
Unit
V
V
V
mA
mA
mA
mW
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
DC Current Gain
Thermal Resistance, Junction to Ambient Air
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cutoff Current
Emitter Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Symbol
(Note 3) h_FE
(Note 1) R_θJA
(Note 3) V_CE(SAT)
(Note 3)
(Note 3)
V_BE(SAT)
V_BE
I_CBO
I_CBO
I_EBO
f_T
C_CBO
C_EBO
Min
220
—
—
—
-580
—
—
100
—
—
Typ
—
—
—
—
-700
-665
—
—
—
—
—
11
Max
475
625
-100
-400
—
-750
-15
-4.0
-100
—
3
—
Unit
—
°C/W
mV
mV
mV
nA
µA
nA
MHz
pF
pF
Test Condition
V_CE = -5.0V, I_C = -2.0mA
Note 1
I_C = -10mA, I_B = -0.5mA
I_C = -100mA, I_B = -5.0mA
I_C = -10mA, I_B = -0.5mA
V_CE = -5.0V, I_C = -2.0mA
V_CB = -30V, I_E = 0
V_CB = -30V, T_j = 150°C
V_EB = -5.0V, I_C = 0
V_CE = -5.0V, I_C = -10mA,
f = 100MHz
V_CB = -10V, f = 1.0MHz
V_EB = -0.5V, f = 1.0MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30373 Rev. 6 - 2
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BC857BS
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