BC857AT_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

BC857AT, BT, CT
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Die Construction
• Complementary NPN Types Available (BC847AT,BT,CT)
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-523
• Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Terminal Connections: See Diagram
• Marking Code: See Table Below & Diagram on Page 2
• Ordering & Date Code Information: See Page 2
• Weight: 0.002 grams (approximate)
A
C
TOP VIEW B C
B
E
G
H
K
N
J
D
Type
BC857AT
BC857BT
BC857CT
L
Marking
3V
3W
3G
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ⎯ ⎯ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
M
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α 0° 8° ⎯
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 1)
(Note 1)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
Value
-50
-45
-5.0
-100
150
833
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
(Note 3)
Collector-Emitter Breakdown Voltage
(Note 3)
Emitter-Base Breakdown Voltage
(Note 3)
DC Current Gain
(Note 3) Current Gain A
B
C
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
h_FE
Collector-Emitter Saturation Voltage
(Note 3) V_CE(SAT)
Base-Emitter Saturation Voltage
(Note 3) V_BE(SAT)
Base-Emitter Voltage
(Note 3) V_BE(ON)
Collector-Cutoff Current
Gain Bandwidth Product
Output Capacitance
(Note 3)
I_CBO
f_T
C_OB
Min
-50
-45
-5
125
220
420
—
—
—
-600
—
—
—
100
—
Noise Figure
NF
—
Typ
—
—
—
—
290
520
—
—
-700
-900
—
—
—
—
—
—
—
Max
—
—
—
250
475
800
-300
-650
—
—
-750
-820
-15
-4.0
—
4.5
10
Unit
V
V
V
Test Condition
I_C = 10μA, I_B = 0
I_C = 10mA, I_B = 0
I_E = 1μA, I_C = 0
— V_CE = -5.0V, I_C = -2.0mA
mV
mV
mV
NA
µA
MHz
pF
dB
I_C = -10mA, I_B = -0.5mA
I_C = -100mA, I_B = -5.0mA
I_C = -10mA, I_B = -0.5mA
I_C = -100mA, I_B = -5.0mA
V_CE = -5.0V, I_C = -2.0mA
V_CE = -5.0V, I_C = -10mA
V_CB = -30V
V_CB = -30V, T_A = 150°C
V_CE = -5.0V, I_C = -10mA, f = 100MHz
V_CB = -10V, f = 1.0MHz
I_C = -0.2mA, V_CE = -5.0Vdc,
R_S = 2.0KΩ, f = 1.0KHz,
BW = 200Hz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30275 Rev. 9 - 2
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