BC856AS_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

BC856AS
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
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Features
• Ideally Suited for Automatic Insertion
• For Switching and AF Amplifier Applications
• Complementary NPN Types Available (BC846AS)
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Pin Connections: See Diagram
• Marking Codes: See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
A
BC
H
K
J
DF
L
C1
B₂
E2
654
123
E₁
B₁
C₂
Top View
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
M
H
1.80 2.20
J
⎯
0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 2)
(Note 2)
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_EM
P_d
R_θJA
T_j, T_stg
Value
-80
-65
-5.0
-100
-200
-200
200
625
-65 to +150
Unit
V
V
V
mA
mA
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
(Note 3)
(Note 3)
(Note 3)
(Note 3)
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
h_FE
(Note 3) V_CE(SAT)
(Note 3) V_BE(SAT)
(Note 3)
(Note 3)
V_BE(ON)
I_CES
I_CBO
I_CBO
Min
-80
-65
-5
125
—
—
—
-600
—
—
—
—
Typ
—
—
—
180
-75
-250
-700
-850
-650
—
—
—
—
Max
—
—
—
250
-300
-650
—
-750
-820
-15
-15
-4.0
Unit
V
V
V
—
mV
mV
mV
nA
nA
µA
Test Condition
I_C = 10μA, I_B = 0
I_C = 10mA, I_B = 0
I_E = 1μA, I_C = 0
V_CE = -5.0V, I_C = -2.0mA
I_C = -10mA, I_B = -0.5mA
I_C = -100mA, I_B = -5.0mA
I_C = -10mA, I_B = -0.5mA
I_C = -100mA, I_B = -5.0mA
V_CE = -5.0V, I_C = -2.0mA
V_CE = -5.0V, I_C = -10mA
V_CE = -80V
V_CB = -30V
V_CB = -30V, T_A = 150°C
Gain Bandwidth Product
f_T
100
—
—
MHz
V_CE = -5.0V, I_C = -10mA,
f = 100MHz
Collector-Base Capacitance
C_CB
—
3
—
pF V_CB = -10V, f = 1.0MHz
Notes:
1. No purposefully added lead.
2. Device mounted on FR-4 PCB; pad layout as shown on page 3 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30834 Rev. 7 - 2
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