BC847BVC_09 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Die Construction
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 3)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
BC847BVC
NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Please click here to visit our online spice models database.
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.002 grams (approximate)
C₁
B₂
E₂
Top View
Bottom View
E₁
B₁
C₂
Device Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Characteristic
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
50
45
6.0
100
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
150
833
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
(Note 5) V_(BR)CBO
50
—
—
V
I_C = 10μA, I_B = 0
Collector-Emitter Breakdown Voltage
(Note 5) V_(BR)CEO
45
—
—
V
I_C = 10mA, I_B = 0
Emitter-Base Breakdown Voltage
(Note 5) V_(BR)EBO
6
—
—
V
I_E = 1μA, I_C = 0
DC Current Gain
(Note 5)
h_FE
200
290
450
— V_CE = 5.0V, I_C = 2.0mA
Collector-Emitter Saturation Voltage
(Note 5)
V_CE(SAT)
—
—
100
300
mV ^{IC = 10mA, IB = 0.5mA}
I_C = 100mA, I_B = 5.0mA
Base-Emitter Saturation Voltage
(Note 5)
V_BE(SAT)
—
700
900
—
mV ^{IC = 10mA, IB = 0.5mA}
I_C = 100mA, I_B = 5.0mA
Base-Emitter Voltage
(Note 5)
V_BE
580
—
660
—
700
770
mV ^{VCE = 5.0V, IC = 2.0mA}
V_CE = 5.0V, I_C = 10mA
Collector-Emitter Cutoff Current
(Note 5)
I_CBO
—
I_CBO
—
15
5.0
nA VCB = 30V
µA V_CB = 30V, T_A = 150°C
Gain Bandwidth Product
f_T
100
—
—
MHz
V_CE = 5.0V, I_C = 10mA,
f = 100MHz
Output Capacitance
C_OBO
—
—
4.5
pF V_CB = 10V, f = 1.0MHz
Noise Figure
NF
—
—
10
dB
V_CE = 5V, R_S = 2.0kΩ,
f = 1.0kHz, BW = 200Hz
Notes:
1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
5. Short duration pulse test used to minimize self-heating effect.
BC847BVC
Document number: DS30638 Rev. 5 - 2
1 of 4
www.diodes.com
April 2009
© Diodes Incorporated