BC847BS_2 Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

BC847BS
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Ideally Suited for Automated Insertion
• For Switching and AF Amplifier Applications
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Marking Information: K1F, See Page 2
• Ordering & Date Code Information: See Page 2
• Weight: 0.006 grams
A
BC
H
K
J
DF
L
C₂
B₁
E₁
E₂
B₂
C₁
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
H
1.80 2.20
M
J
—
0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 1)
(Note 1)
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_d
R_θJA
T_j, T_STG
Value
50
45
5.0
100
200
200
200
500
-65 to +150
Unit
V
V
V
mA
mA
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
DC Current Gain
Characteristic
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cutoff Current
Emitter Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Symbol Min
Typ
Max Unit
Test Condition
(Note 3) h_FE
200
—
450
— V_CE = 5.0V, I_C = 2.0mA
(Note 3) V_CE(SAT)
—
—
—
100
400
mV ^{IC = 10mA, IB = 0.5mA}
I_C = 100mA, I_B = 5.0mA
(Note 3) V_BE(SAT)
—
755
—
mV I_C = 10mA, I_B = 0.5mA
(Note 3) V_BE
580
665
700
mV V_CE = 5.0V, I_C = 2.0mA
(Note 3)
I_CBO
I_CBO
—
—
15
nA VCB = 30V, IE = 0
—
5.0
µA _{VCB = 30V, Tj = 125°C}
(Note 3) I_EBO
—
—
100
nA V_EB = 5.0V, I_C = 0
f_T
100
—
—
MHz
V_CE = 5.0V, I_C = 10mA,
f = 100MHz
C_CBO
—
2.0
3.0
pF V_CB = 10V, f = 1.0MHz
C_EBO
—
11
—
pF V_EB = 0.5V, f = 1.0MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found
on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30222 Rev. 12 - 2
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BC847BS
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