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BC847BLP_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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Features
⢠Complementary PNP Type Available (BC857BLP)
⢠Ultra-Small Leadless Surface Mount Package
⢠Lead Free By Design/RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
⢠Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
⢠Case: DFN1006-3
⢠Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020C
⢠Terminal Connections Indicator: Collector Dot
⢠Terminals: Finish ⯠NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
⢠Ordering Information: See Page 3
⢠Marking Information: See Page 3
⢠Weight: 0.0009 grams
BC847BLP
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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BOTTOM VIEW
1
C
E3
B2
TOP VIEW
(Internal Schematic)
DFN1006-3
Maximum Ratings @TA = 25°C unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
50
45
6.0
100
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
Tj, TSTG
Value
250
500
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Symbol Min
Typ
Max Unit Test Condition
V(BR)CBO
50
â
â
V IC = 10μA, IB = 0
V(BR)CEO
45
â
â
V IC = 10mA, IB = 0
V(BR)EBO
6
â
â
V IE = 1μA, IC = 0
hFE
200
350
450
â VCE = 5.0V, IC = 2.0mA
VCE(SAT)
â
80
200
250
600
mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VBE(SAT)
â
â
700
900
â
â
mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VBE(ON)
580
â
640
725
700
770
mV VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
ICBO
â
â
â
15
nA VCB = 30V
â
5.0
µA VCB = 30V, TA = 150°C
fT
100
â
â
MHz VCE = 5.0V, IC = 10mA,
f = 100MHz
CCBO
â
3.0
â
pF VCB = 10V, f = 1.0MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
3. Device mounted on FR-4 PCB, pad layout as shown on page 3, or Diodes Inc. suggested pad layout document AP02001 on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
DS30525 Rev. 10 - 2
1 of 3
www.diodes.com
BC847BLP
© Diodes Incorporated
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