BC847BLP4 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features
• Epitaxial Die Construction
• Ultra-Small Leadless Surface Mount Package
• Ultra Low Profile (0.4mm max)
• Complementary PNP Type Available (BC857BLP4)
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
BC847BLP4
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Mechanical Data
• Case: DFN1006H4-3
• Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections Indicator: Collector Dot
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Ordering Information: See Page 3
• Marking Information: See Page 3
• Weight: 0.0008 grams (approximate)
1
3_E
C
2_B
Bottom View
Top View
Internal Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Characteristic
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
50
45
6.0
100
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @T_A = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
250
500
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Symbol Min
Typ
Max Unit Test Condition
V_(BR)CBO
50
—
—
V I_C = 10μA, I_B = 0
V_(BR)CEO
45
—
—
V I_C = 10mA, I_B = 0
V_(BR)EBO
6
—
—
V I_E = 1μA, I_C = 0
h_FE
200
350
450
— V_CE = 5.0V, I_C = 2.0mA
V_CE(SAT)
—
80
200
250
600
mV ^{IC = 10mA, IB = 0.5mA}
I_C = 100mA, I_B = 5.0mA
V_BE(SAT)
—
—
700
900
—
—
mV ^{IC = 10mA, IB = 0.5mA}
I_C = 100mA, I_B = 5.0mA
V_BE(ON)
580
—
640
725
700
770
mV ^{VCE = 5.0V, IC = 2.0mA}
V_CE = 5.0V, I_C = 10mA
I_CBO
—
—
—
—
15
nA VCB = 30V
5.0
µA V_CB = 30V, T_A = 150°C
f_T
100
—
—
MHz ^{VCE = 5.0V, IC = 10mA,}
f = 100MHz
C_CBO
—
3.0
—
pF V_CB = 10V, f = 1.0MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
3. Device mounted on FR-4 PCB, pad layout as shown on page 3, or Diodes Inc. suggested pad layout document AP02001 on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
BC847BLP4
Document number: DS31297 Rev. 5 - 2
1 of 4
www.diodes.com
July 2009
© Diodes Incorporated