BC847AT_2 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

BC847AT, BT, CT
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Die Construction
• Complementary PNP Types Available
(BC857AT,BT,CT)
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-523
• Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Terminal Connections: See Diagram
• Marking Code: See Table
• Ordering Information: See Page 2
• Marking Information: See Page 2
• Weight: 0.002 grams (approximate)
A
C
TOP VIEW B C
B
E
G
H
K
N
J
D
Type
BC847AT
BC847BT
BC847CT
L
Marking
1E
1F
1M
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D ⎯ ⎯ 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
M
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
α 0° 8° ⎯
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_d
R_θJA
T_j, T_STG
Value
50
45
6.0
100
150
833
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol Min
Typ
Max Unit
Test Condition
DC Current Gain
(Note 3)
Current Gain A
110
—
220
B
h_FE
200
290
450
— V_CE = 5.0V, I_C = 2.0mA
C
420
520
800
Collector-Emitter Saturation Voltage
(Note 3) V_CE(SAT) —
—
250
600
mV ^{IC = 10mA, IB = 0.5mA}
I_C = 100mA, I_B = 5.0mA
Base-Emitter Saturation Voltage
(Note 3) V_BE(SAT) —
700
900
—
mV ^{IC = 10mA, IB = 0.5mA}
I_C = 100mA, I_B = 5.0mA
Base-Emitter Voltage
(Note 3)
V_BE
580
—
660
—
700
770
mV ^{VCE = 5.0V, IC = 2.0mA}
V_CE =5.0V, I_C = 10mA
Collector-Emitter Cutoff Current
(Note 3)
I_CBO
—
I_CBO
—
15
5.0
nA VCB = 30V
µA _{VCB = 30V, TA = 150°C}
Gain Bandwidth Product
f_T
100
—
—
MHz ^{VCE = 5.0V, IC = 10mA,}
f = 100MHz
Output Capacitance
C_OBO
—
—
4.5
pF V_CB = 10V, f = 1.0MHz
Noise Figure
BC847BT
BC847CT
NF
—
—
10
4.0
dB ^{VCE = 5V, RS = 2.0kΩ,}
f = 1.0kHz, BW = 200Hz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30274 Rev. 9 - 2
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