BC846AS_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

BC846AS
Features
DUAL NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
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• Ideally Suited for Automatic Insertion
• For Switching and AF Amplifier Applications
• Complementary PNP Type Available (BC856AS)
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.006 grams (approximate)
A
BC
H
K
J
DF
L
C₁
B₂
E₂
654
1 23
E₁
B₁
C₂
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
M
F
0.30 0.40
H
1.80 2.20
J
⎯
0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 2)
(Note 2)
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_EM
P_d
R_θJA
T_j, T_stg
Value
80
65
6.0
100
200
200
200
625
-65 to +150
Unit
V
V
V
mA
mA
mA
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Symbol Min
Typ
Max
Unit
Test Condition
(Note 3) V_(BR)CBO
80
—
—
V I_C = 10μA, I_B = 0
(Note 3) V_(BR)CEO
65
—
—
V I_C = 10mA, I_B = 0
(Note 3) V_(BR)EBO
6
—
—
V I_E = 1μA, I_C = 0
(Note 3) h_FE
110
—
220
— V_CE = 5.0V, I_C = 2.0mA
(Note 3) V_CE(SAT)
—
90
200
250
600
mV ^{IC = 10mA, IB = 0.5mA}
I_C = 100mA, I_B = 5.0mA
(Note 3) V_BE(SAT)
—
700
900
—
mV ^{IC = 10mA, IB = 0.5mA}
I_C = 100mA, I_B = 5.0mA
(Note 3) V_BE(ON)
580
—
660
—
700
770
mV ^{VCE = 5.0V, IC = 2.0mA}
V_CE = 5.0V, I_C = 10mA
I_CES
—
—
15
nA VCE = 80V
(Note 3) I_CBO
—
—
15
nA V_CB = 40V
I_CBO
—
—
5.0
µA _{VCB = 30V, TA = 150°C}
f_T
100
—
—
MHz ^{VCE = 5.0V, IC = 10mA,}
f = 100MHz
C_CB
—
2.0
—
pF V_CB = 10V, f = 1.0MHz
Notes:
1. No purposefully added lead.
2. Device mounted on FR-4 PCB, pad layout as shown on page 3 or on Diodes Inc. suggested pad layout document AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30833 Rev. 7 - 2
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BC846AS
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