BC817-16_09 Datasheet, PDF (1/4 Pages) Diodes Incorporated – NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features
• Ideally Suited for Automated Insertion
• Epitaxial Planar Die Construction
• For Switching, AF Driver and Amplifier Applications
• Complementary PNP Types Available (BC807)
• Lead, Halogen and Antimony Free, RoHS Compliant
• "Green" Device (Notes 3 and 4)
• Qualified to AEC-Q101 Standards for High Reliability
BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
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Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Pin Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
C
Top View
B
E
Device Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Symbol
V_CEO
V_EBO
I_C
I_CM
I_EM
Value
45
5.0
800
1000
1000
Unit
V
V
mA
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation at T_SB = 50°C (Note 1)
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
P_D
R_θSB
R_θJA
T_J, T_STG
Value
310
320
403
-65 to +150
Unit
mW
°C/W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic (Note 2)
Symbol
Min
Max
Unit
Test Condition
Current Gain Group -16
100
250
DC Current Gain
-25
160
400
-40
250
600
Current Gain Group -16 ^hFE
60
—
—
V_CE = 1.0V, I_C = 100mA
-25
100
—
—
V_CE = 1.0V, I_C = 300mA
-40
170
—
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Gain Bandwidth Product
V_CE(SAT)
—
V_BE
—
I_CES
—
I_EBO
—
f_T
100
0.7
V
I_C = 500mA, I_B = 50mA
1.2
V
V_CE = 1.0V, I_C = 300mA
100
nA VCE = 45V
5.0
µA V_CE = 25V, T_j = 150°C
100
nA V_EB = 4.0V
—
MHz ^{VCE = 5.0V, IC = 10mA,}
f = 50MHz
Collector-Base Capacitance
C_CBO
—
12
pF V_CB = 10V, f = 1.0MHz
Notes:
1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm² area.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
BC817-16 / -25 / -40
Document number: DS11107 Rev. 18 - 2
1 of 4
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April 2009
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