BC817-16W Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – NPN Silicon AF Transistor (For general AF applications High collector current High current gain)

SPICE MODELS: BC817-16W BC817-25W BC817-40W
BC817-16W / -25W / -40W
Lead-free Green
Features
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
· Ideally Suited for Automatic Insertion
· Epitaxial Planar Die Construction
· For Switching, AF Driver and Amplifier Applications
· Complementary PNP Types Available (BC807-xxW)
· Lead Free By Design/RoHS Compliant (Note 1)
A
· "Green" Device (Note 2)
C
Mechanical Data
· Case: SOT-323
BC
· Case Material: Molded Plastic. "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
B
E
G
· Moisture Sensitivity: Level 1 per J-STD-020C
H
· Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
K
· Pin Connections: See Diagram
· Marking:
P/N
Marking
J
DE
L
BC817-16W K6A
BC817-25W K6B
BC817-40W K6C
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
H
1.80 2.20
M
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.18
a
0°
8°
All Dimensions in mm
· Ordering & Date Code Information: See Page 3
· Approximate Weight: 0.006 grams
Maximum Ratings ^{@TA = 25°C unless otherwise specified}
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation at T_SB = 50°C (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range
Symbol
VCEO
V_EBO
I_C
I_CM
I_EM
Pd
R_qJA
Tj, TSTG
Value
45
5.0
500
1000
1000
200
625
-65 to +150
Unit
V
V
mA
mA
mA
mW
°C/W
°C
Electrical Characteristics ^{@TA = 25°C unless otherwise specified}
Characteristic (Note 4)
Symbol Min
Max
Unit
Test Condition
DC Current Gain
Current Gain Group -16
100
250
-25
160
400
-40
Current Gain Group -16
h_FE
250
60
600
—
-25
100
—
-40
170
—
V_CE = 1.0V, I_C = 100mA
—
V_CE = 1.0V, I_C = 300mA
Collector-Emitter Saturation Voltage
V_CE(SAT)
—
0.7
V
IC = 500mA, IB = 50mA
Base-Emitter Voltage
VBE
—
1.2
V
V_CE = 1.0V, I_C = 300mA
Collector-Emitter Cutoff Current
ICES
—
100
5.0
nA
V_CE = 45V
µA
VCE = 25V, Tj = 150°C
Emitter-Base Cutoff Current
IEBO
—
100
nA
V_EB = 4.0V
Gain Bandwidth Product
fT
100
—
MHz
VCE = 5.0V, IC = 10mA,
f = 50MHz
Collector-Base Capacitance
C_CBO
—
12
pF
V_CB = 10V, f = 1.0MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
DS30575 Rev. 4 - 2
1 of 3
BC817-16W / -25W / -40W
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