BC807 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP general purpose transistor

BC807-16/ -25/ -40
PNP SURFACE MOUNT TRANSISTOR
Features
· Ideally Suited for Automatic Insertion
· Epitaxial Planar Die Construction
· For Switching, AF Driver and Amplifier
Applications
A
· Complementary NPN Types Available (BC817)
C
Mechanical Data
BC
· Case: SOT-23, Molded Plastic
· Case material - UL Flammability Rating
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
B ^{TOP VIEW} E
E
D
G
H
· Terminals: Solderable per MIL-STD-202,
Method 208
· Pin Connections: See Diagram
K
J
L
D
· Marking (See Page 3): BC807-16 5A, K5A
BC807-25 5B, K5B
BC807-40 5C,K5C
· Ordering & Date Code Information: See Page 3
· Approx. Weight: 0.008 grams
Maximum Ratings @ T_A = 25°C unless otherwise specified
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation at TSB = 50°C (Note 1)
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
VCEO
VEBO
IC
ICM
I_EM
P_d
RqJSB
RqJA
Tj, TSTG
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
M
L
0.45 0.61
M
0.85 0.80
a
0°
8°
All Dimensions in mm
Value
-45
-5.0
-500
-1000
-1000
310
320
403
-65 to +150
Unit
V
V
mA
mA
mA
mW
°C/W
°C/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic (Note 2)
Symbol Min Typ
DC Current Gain
Current Gain Group -16
100
-25
160
-40
Current Gain Group -16
h_FE
250
60
—
-25
100
-40
170
Collector-Emitter Saturation Voltage
VCE(SAT)
—
—
Base-Emitter Voltage
VBE
—
—
Collector-Emitter Cutoff Current
ICES
—
—
Emitter-Base Cutoff Current
IEBO
—
—
Gain Bandwidth Product
f_T
100
—
Collector-Base Capacitance
C_CBO
—
—
Max
250
400
600
—
—
—
-0.7
-1.2
-100
-5.0
-100
—
12
Unit
Test Condition
VCE = 1.0V, IC = 100mA
— _{VCE = 1.0V, IC = 300mA}
V
V
nA
µA
nA
MHz
pF
IC = 500mA, IB = 50mA
VCE = 1.0V, IC = 300mA
VCE = 45V
V_CE = 25V, T_j = 150°C
VEB = 4.0V
VCE = 5.0V, IC = 10mA,
f = 50MHz
VCB = 10V, f = 1.0MHz
Notes: 1. Device mounted on ceramic substrate 0.7mm; 2.5cm2 area.
2. Short duration pulse test used to minimize self-heating effect.
DS11208 Rev. 9 - 2
1 of 3
BC807-16/-25/-40