BC807-16_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – PNP SURFACE MOUNT TRANSISTOR

BC807-16/ -25/ -40
Features
PNP SURFACE MOUNT TRANSISTOR
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• Ideally Suited for Automatic Insertion
• Epitaxial Planar Die Construction
• For Switching, AF Driver and Amplifier Applications
• Complementary NPN Types Available (BC817)
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
• Qualified to AEC-Q101 Standards for High Reliability
A
C
BC
B ^{TOP VIEW} E
E
D
G
Mechanical Data
H
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe)
• Pin Connections: See Diagram
• Ordering Information: See Page 3
• Marking Information: See Page 3
- BC807-16 5A, K5A
- BC807-25 5B, K5B
- BC807-40 5C, K5C
• Weight: 0.008 grams (approximate)
K
M
J
L
C
B
E
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K
0.903 1.10
L
0.45 0.61
M
0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation at T_SB = 50°C (Note 1)
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V_CEO
V_EBO
I_C
I_CM
I_EM
P_d
R_θJSB
R_θJA
T_j, T_STG
Value
-45
-5.0
-500
-1000
-1000
310
320
403
-65 to +150
Unit
V
V
mA
mA
mA
mW
°C/W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic (Note 2)
Symbol Min
Typ
Max
Unit
Test Condition
DC Current Gain
Current Gain Group -16
100
-25
160
250
V_CE = -1.0V, I_C = -100mA
400
-40
Current Gain Group -16
h_FE
250
60
—
600
—
— _{VCE = -1.0V, IC = -300mA}
-25
100
—
-40
170
—
Collector-Emitter Saturation Voltage
V_CE(SAT)
—
—
-0.7
V I_C = -500mA, I_B = -50mA
Base-Emitter Voltage
V_BE
—
—
-1.2
V V_CE = -1.0V, I_C = -300mA
Collector-Emitter Cutoff Current
I_CES
—
—
-100
-5.0
nA V_CE = -45V
µA V_CE = -25V, T_j = 150°C
Emitter-Base Cutoff Current
I_EBO
—
—
-100
nA V_EB = -4.0V
Gain Bandwidth Product
f_T
100
—
—
MHz
V_CE = -5.0V, I_C = -10mA,
f = 50MHz
Collector-Base Capacitance
C_CBO
—
—
12
pF V_CB = -10V, f = 1.0MHz
Notes:
1. Device mounted on ceramic substrate 0.7mm; 2.5cm² area.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
DS11208 Rev. 17 - 2
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BC807-16/-25/-40
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