BC807-16W Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – PNP Silicon AF Transistor (For general AF applications High collector current High current gain)

SPICE MODELS: BC807-16W BC807-25W BC807-40W
BC807-16W / -25W / -40W
Features
Lead-free Green
PNP SURFACE MOUNT TRANSISTOR
· Ideally Suited for Automatic Insertion
· Epitaxial Planar Die Construction
· For Switching, AF Driver and Amplifier Applications
· Complementary NPN Types Available (BC817-xxW)
· Lead Free By Design/RoHS Compliant (Note 1)
· "Green" Device (Note 2)
Mechanical Data
· Case: SOT-323
A
C
BC
· Case Material: Molded Plastic. "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
B
E
G
· Moisture Sensitivity: Level 1 per J-STD-020C
H
· Terminals: Finish – Matte Tin annealed over Alloy 42
K
leadframe. Solderable per MIL-STD-202, Method 208
· Pin Connections: See Diagram
· Marking:
P/N
Marking
J
DE
L
BC807-16W K5A
BC807-25W K5B
BC807-40W K5C
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
H
1.80 2.20
M
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.18
a
0°
8°
All Dimensions in mm
· Ordering & Date Code Information: See Page 3
· Approximate Weight: 0.006 grams
Maximum Ratings ^{@TA = 25°C unless otherwise specified}
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation at T_SB = 50°C (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Operating and Storage Temperature Range
Symbol
V_CEO
VEBO
I_C
ICM
I_EM
Pd
R_qJA
Tj, TSTG
Value
-45
-5.0
-500
-1000
-1000
200
625
-65 to +150
Unit
V
V
mA
mA
mA
mW
°C/W
°C
Electrical Characteristics ^@TA ^{= 25°C unless otherwise specified}
Characteristic (Note 4)
Symbol Min Typ Max Unit
Test Condition
DC Current Gain
Current Gain Group -16
100
250
V_CE = -1.0V, I_C = -100mA
-25
160
400
-40
Current Gain Group -16
h_FE
250
60
—
600
—
— _{VCE = -1.0V, IC = -300mA}
-25
100
—
-40
170
—
Collector-Emitter Saturation Voltage
V_CE(SAT)
—
—
-0.7
V IC = -500mA, IB = -50mA
Base-Emitter Voltage
VBE
—
—
-1.2
V VCE = -1.0V, IC = -300mA
Collector-Emitter Cutoff Current
I_CES
—
—
-100
-5.0
nA VCE = -45V
µA VCE = -25V, Tj = 150°C
Emitter-Base Cutoff Current
I_EBO
—
—
-100
nA VEB = -4.0V
Gain Bandwidth Product
f_T
100
—
—
MHz
V_CE = -5.0V, I_C = -10mA,
f = 50MHz
Collector-Base Capacitance
C_CBO
—
—
12
pF VCB = -10V, f = 1.0MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
DS30577 Rev. 5 - 2
1 of 3
BC807-16W / -25W / -40W
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