BAW56_ Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL SURFACE MOUNT SWITCHING DIODE

SPICE MODEL: BAW56
BAW56
DUAL SURFACE MOUNT SWITCHING DIODE
Features
• Fast Switching Speed
• Surface Mount Package Ideally Suited for Automatic Insertion
• For General Purpose Switching Applications
• High Conductance
• Lead Free/RoHS Compliant (Note 3)
A
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202,
Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Polarity: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
BC
TOP VIEW
E
D
G
H
K
M
J
L
D
Maximum Ratings @T_A = 25°C unless otherwise specified
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K
0.903 1.10
L
0.45 0.61
M
0.085 0.180
α
0°
8°
All Dimensions in mm
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
@ t = 1.0μs
@ t = 1.0s
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_FSM
P_d
R_θJA
T_j , T_STG
Value
100
75
53
300
2.0
1.0
350
357
-65 to +150
Unit
V
V
V
mA
A
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V_(BR)R
75
⎯
V
I_R = 2.5μA
Forward Voltage
Reverse Current (Note 2)
0.715
I_F = 1.0mA
V_F
⎯
0.855
1.0
V
I_F = 10mA
I_F = 50mA
1.25
I_F = 150mA
2.5
μA
V_R = 75V
I_R
⎯
50
μA
V_R = 75V, T_j = 150°C
30
μA
V_R = 25V, T_j = 150°C
25
nA
V_R = 20V
Total Capacitance
C_T
⎯
2.0
pF
V_R = 0, f = 1.0MHz
Reverse Recovery Time
t_rr
⎯
4.0
ns
I_F = I_R = 10mA,
I_rr = 0.1 x I_R, R_L = 100Ω
Notes:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS12008 Rev. 16 - 2
1 of 3
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