BAW156_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL SURFACE MOUNT LOW LEAKAGE DIODE

SPICE MODEL: BAW156
BAW156
Lead-free
DUAL SURFACE MOUNT LOW LEAKAGE DIODE
Features
· Surface Mount Package Ideally Suited for Automatic Insertion
· Very Low Leakage Current
· Lead Free/RoHS Compliant (Note 3)
Mechanical Data
A
BC
· Case: SOT-23
E
D
G
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Solderable per MIL-STD-202, Method 208
H
K
M
J
L
D
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
· Polarity: See Diagram
· Marking: K53, See Page 3
· Ordering Information, See Page 3
· Weight: 0.008 grams (approximate)
TOP VIEW
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
(Note 2)
Single diode
Double diode
Repetitive Peak Forward Current (Note 2)
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0ms
@ t = 1.0s
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
V_R
V_R(RMS)
IFM
IFRM
I_FSM
Pd
R_qJA
Tj , TSTG
Value
85
60
160
140
500
4.0
1.0
0.5
250
500
-65 to +150
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J 0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
a
0°
8°
All Dimensions in mm
Unit
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage
Leakage Current (Note 1)
Total Capacitance
Reverse Recovery Time
Symbol Min
Typ
Max
V_(BR)R
85
¾
¾
0.90
V_F
¾
¾
1.0
1.1
1.25
I_R
¾
5.0
¾
80
C_T
¾
3
¾
trr
¾
¾
3.0
Notes:
1. Short duration test pulse to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
Unit
V
V
nA
nA
pF
ms
Test Condition
IR = 100mA
IF = 1.0mA
I_F = 10mA
I_F = 50mA
IF = 150mA
V_R = 75V
V_R = 75V, T_j = 150°C
V_R = 0, f = 1.0MHz
I_F = I_R = 10mA,
I_rr = 0.1 x I_R, R_L = 100W
DS30231 Rev. 8 - 2
1 of 3
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BAW156
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