BAW101V_15 Datasheet, PDF (1/4 Pages) Diodes Incorporated – HIGH VOLTAGE DUAL SWITCHING DIODE

Features
• Fast Switching Speed: Maximum of 50ns
• High Reverse Breakdown Voltage: 325V for Single Diode or
650V for Series Connection
• Two Electrically Isolated Elements in a Single Compact Package
• Low Leakage Current: Maximum of 50nA when V_R = 5V or
Maximum of 150nA when V_R = 250V at Room Temperature
• Thermally Efficient Copper Alloy leadframe for High Power
Dissipation
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)
• "Green" Device (Note 4)
BAW101V
HIGH VOLTAGE DUAL SWITCHING DIODE
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.006 grams (approximate)
654
Top View
Bottom View
123
Device Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
Single Diode
Series Connection
V_RRM
325
650
V
Working Peak Reverse Voltage
DC Blocking Voltage
Single Diode
V_RWM
325
Series Connection
V_R
650
V
RMS Reverse Voltage
Forward Current (Note 2)
V_R(RMS)
230
V
Single Diode Loaded
Double Diode Loaded
I_F
250
140
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
I_FSM
8.0
A
Repetitive Peak Forward Current @ t = 8.3ms (Note 2)
I_FRM
3.0
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
500
250
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage
Reverse Current (Note 1)
Total Capacitance
Reverse Recovery Time
Symbol
Min
V_(BR)R
300
V_F
⎯
⎯
I_R
⎯
⎯
C_T
⎯
t_rr
⎯
Max
⎯
1.1
50
150
50
2.0
50
Unit
V
V
nA
nA
μA
pF
ns
Test Condition
I_R = 100μA
I_F = 100mA
V_R = 5V
V_R = 250V
V_R = 250V, T_J = 150°C
V_R = 0, f = 1.0MHz
I_F = I_R = 30mA,
I_rr = 0.1 x I_R, R_L = 100Ω
Notes:
1. Short duration pulse test used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead. Halogen and Antimony Free.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
BAW101V
Document number: DS32178 Rev. 4 - 2
1 of 4
www.diodes.com
September 2010
© Diodes Incorporated