BAV99DW_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

SPICE MODEL: BAV99DW
BAV99DW
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
Features
· Fast Switching Speed
· Ultra-Small Surface Mount Package
A
· For General Purpose Switching Applications
SOT-363
· High Conductance
· Two “BAV99” Circuits In One Package
Dim Min Max
BC
A
0.10 0.30
· Lead Free/RoHS Compliant (Note 4)
B
1.15 1.35
· Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
· Case: SOT-363
H
K
C
2.00 2.20
D
0.65 Nominal
M
F
0.30 0.40
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Solderable per MIL-STD-202, Method 208
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Please See Ordering Information, Note 6, on
Page 3
J
DF
L
AC
1
C₂
A₂
A₁
C₁
AC
2
H
1.80 2.20
J
¾
0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
a
0°
8°
· Polarity: See Diagram
TOP VIEW
All Dimensions in mm
· Marking: KJG (See Page 3)
· Weight: 0.006 grams (approximate)
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0ms
@ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_FSM
P_d
R_qJA
P_d
R_qJA
Tj , TSTG
Value
100
75
53
215
2.0
1.0
0.5
200
625
300
417
-65 to +150
Unit
V
V
V
mA
A
mW
°C/W
mW
°C/W
°C
Electrical Characteristics @ T_A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 3)
V(BR)R
75
¾
V
I_R = 2.5mA
Forward Voltage (Note 3)
0.715
IF = 1.0mA
V_F
¾
0.855
1.0
V
I_F = 10mA
I_F = 50mA
1.25
I_F = 150mA
Reverse Current (Note 3)
Total Capacitance
Reverse Recovery Time
2.5
mA
VR = 75V
I_R
¾
50
mA
V_R = 75V, T_j = 150°C
30
mA
V_R = 25V, T_j = 150°C
25
nA
V_R = 20V
C_T
¾
2.0
pF
VR = 0, f = 1.0MHz
t_rr
¾
4.0
ns
IF = IR = 10mA,
I_rr = 0.1 x I_R, R_L = 100W
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Device mounted on Alumina PCB, 0.4 inch x 0.3 inch x 0.024 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration test pulse used to minimize self-heating effect.
4. No purposefully added lead.
DS30145 Rev. 9 - 2
1 of 3
BAV99DW
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