BAV756DW_1 Datasheet, PDF (1/3 Pages) Diodes Incorporated – QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

SPICE MODELS: BAV756DW
BAV756DW
Lead-free
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
Features
· Fast Switching Speed
· Ultra-Small Surface Mount Package
· For General Purpose Switching Applications
A
· High Conductance
· One BAV70 Circuit and One BAW56 Circuit In One Package
BC
· Easily Connected As Full Wave Bridge
· Lead Free/RoHS Compliant (Note 4)
Mechanical Data
G
H
· Case: SOT-363
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
K
J
DF
L
· Terminals: Solderable per MIL-STD-202, Method 208
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
C₁
A₁
C₂
· Polarity: See Diagram
· Marking: KCA, See Page 2
A₁
C₂
A₂
· Ordering Information: See Page 2
TOP VIEW
· Weight: 0.006 grams (approximate)
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
M
F
0.30 0.40
H
1.80 2.20
J
¾ 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1 and 3)
Average Rectified Output Current (Note 1 and 3)
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
Power Dissipation (Note 1 and 3)
Power Dissipation T_S = 60°C (Note 3)
Thermal Resistance Junction to Ambient Air (Note 1 and 3)
Thermal Resistance Junction to Soldering Point (Note 3)
Operating and Storage Temperature Range
Symbol
V_RM
V_RRM
VRWM
VR
V_R(RMS)
IFM
I_O
I_FSM
P_d
P_d
R_qJA
RqJS
T_j, T_STG
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Value
100
75
53
300
150
2.0
1.0
200
300
625
275
-65 to +150
Unit
V
V
V
mA
mA
A
mW
mW
°C/W
°C/W
°C
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Current (Note 2)
Total Capacitance
Symbol
Min
V_(BR)R
75
V_F
¾
I_R
¾
CT
¾
Max
¾
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0
Unit
V
V
mA
mA
mA
nA
pF
Reverse Recovery Time
t_rr
¾
4.0
ns
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. One or more diodes loaded.
4. No purposefully added lead.
DS30148 Rev. 7 - 2
1 of 3
www.diodes.com
Test Condition
I_R = 2.5mA
IF = 1.0mA
I_F = 10mA
IF = 50mA
I_F = 150mA
V_R = 75V
VR = 75V, Tj = 150°C
V_R = 25V, T_j = 150°C
VR = 20V
V_R = 0, f = 1.0MHz
IF = IR = 10mA,
I_rr = 0.1 x I_R, R_L = 100W
BAV756DW
ã Diodes Incorporated