BAV756DW_08 Datasheet, PDF (1/3 Pages) Diodes Incorporated – QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

BAV756DW
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
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Features
Mechanical Data
• Fast Switching Speed
• Ultra-Small Surface Mount Package
• For General Purpose Switching Applications
• High Conductance
• One BAV70 Circuit and One BAW56 Circuit In One Package
• Easily Connected As Full Wave Bridge
• Lead Free/RoHS Compliant (Note 3)
• "Green" Device (Notes 4 and 5)
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Polarity: See Diagram
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.006 grams (approximate)
SOT-363
C₁
A₁
C₂
TOP VIEW
A₁
C₂
A₂
TOP VIEW
Internal Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
V_RM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
75
V
V_R
RMS Reverse Voltage
V_R(RMS)
53
V
Forward Continuous Current (Notes 1 and 2)
I_FM
300
mA
Average Rectified Output Current (Notes 1 and 2)
I_O
150
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0μs
@ t = 1.0s
I_FSM
2.0
1.0
A
Thermal Characteristics
Characteristic
Power Dissipation (Notes 1 and 2)
Power Dissipation T_S = 60°C (Note 2)
Thermal Resistance Junction to Ambient Air (Notes 1 and 2)
Thermal Resistance Junction to Soldering Point (Note 2)
Operating and Storage Temperature Range
Symbol
P_D
P_D
R_θJA
R_θJS
T_J, T_STG
Value
200
300
625
275
-65 to +150
Unit
mW
mW
°C/W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Reverse Current (Note 6)
Total Capacitance
Reverse Recovery Time
Symbol Min
V_(BR)R
75
V_F
⎯
I_R
⎯
C_T
⎯
t_rr
⎯
Max
⎯
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
Unit
V
V
μA
μA
μA
nA
pF
ns
Test Condition
I_R = 2.5μA
I_F = 1.0mA
I_F = 10mA
I_F = 50mA
I_F = 150mA
V_R = 75V
V_R = 75V, T_J = 150°C
V_R = 25V, T_J = 150°C
V_R = 20V
V_R = 0, f = 1.0MHz
I_F = I_R = 10mA,
I_rr = 0.1 x I_R, R_L = 100Ω
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. One or more diodes loaded.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
6. Short duration pulse test used to minimize self-heating effect.
BAV756DW
Document number: DS30148 Rev. 9 - 2
1 of 3
www.diodes.com
April 2008
© Diodes Incorporated