BAV70_ Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL SURFACE MOUNT SWITCHING DIODE

SPICE MODEL: BAV70
BAV70
DUAL SURFACE MOUNT SWITCHING DIODE
Features
• Fast Switching Speed
• Surface Mount Package Ideally Suited for Automatic Insertion
• For General Purpose Switching Applications
• High Conductance
A
• Lead Free/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
TOP VIEW
BC
• Case: SOT-23
E
D
G
• Case Material: Molded Plastic. UL Flammability Classification
H
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
K
M
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
J
L
Alloy 42 leadframe).
• Polarity: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K
0.903 1.10
L
0.45 0.61
M
0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
@ t = 1.0μs
@ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FRM
I_FSM
P_d
R_θJA
T_j , T_STG
Electrical Characteristics @T_A = 25°C unless otherwise specified
Value
100
75
53
300
150
450
2.0
1.0
350
357
-65 to +150
Unit
V
V
V
mA
mA
mA
A
mW
°C/W
°C
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
V_(BR)R
75
V_F
⎯
I_R
⎯
C_T
⎯
t_rr
⎯
⎯
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
V
I_R = 2.5μA
I_F = 1.0mA
V
I_F = 10mA
I_F = 50mA
I_F = 150mA
μA
V_R = 75V
μA
V_R = 75V, T_j = 150°C
μA
V_R = 25V, T_j = 150°C
nA
V_R = 20V
pF
V_R = 0, f = 1.0MHz
ns
I_F = I_R = 10mA,
I_rr = 0.1 x I_R, R_L = 100Ω
Notes:
1 Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS12006 Rev. 15 - 2
1 of 3
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BAV70
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