BAV20 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose diodes

BAV20 / BAV21
FAST SWITCHING DIODE
Features
· Glass Package for High Reliability
· Planar Die Construction
· Low Reverse Leakage Current
· Also available in Surface Mount Package
(BAV20W and BAV21W)
A
B
A
C
D
Mechanical Data
· Case: DO-35, Glass
· Leads: Solderable per MlL-STD-202,
Method 208
· Marking: Cathode Band and Type Number
· Weight: 0.13 grams (approx.)
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Forward Surge Current
@ t = 1.0s
Repetitive Peak Forward Current (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
V_RRM
V_RWM
VR
V_R(RMS)
I_FM
I₀
I_FSM
I_FRM
P_d
R_qJA
T_j, T_STG
DO-35
Dim
Min
Max
A
25.40
—
B
—
4.00
C
—
0.60
D
—
2.00
All Dimensions in mm
BAV20
BAV21
Unit
200
250
V
150
200
V
106
141
V
250
mA
200
mA
1.0
A
625
mA
500
mW
300
K/W
-65 to +175
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Maximum Forward Voltage
Maximum Peak Reverse Current
Dynamic Forward Resistance
Junction Capacitance
Reverse Recovery Time
Symbol Min Typ Max Unit
Test Condition
V_FM
—
—
1.0
V IF = 100mA
BAV20
BAV20
BAV21
I_R
BAV21
100 nA VR = 150V
—
—
15
100
mA V_R = 150V, T_j = 100°C
nA V_R = 200V
15
mA V_R = 200V, T_j = 100°C
r_f
—
5.0
—
W IF = 10mA
C_j
—
1.5
—
pF VR = 0, f = 1.0MHz
t_rr
—
—
50
ns
IF = IR = 30mA to IR = 3.0mA;
R_L = 100 W
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 8.0mm.
DS22006 Rev. H-2
1 of 2
BAV20 / BAV21